Hole Capture-Structural R
Hole Capture-Structural Relaxation Mechanism of Defect Generation in Ionizing-irradiated $a$-SiO$_2$
Hole Capture-Structural Relaxation Mechanism of Defect Generation in Ionizing-irradiated $a$-SiO$_2$
arXiv:2410.11475v1 Announce Type: cross
Abstract: The permanent ionization damage of semiconductor devices in harsh radiation environments stems from $E’_gamma$ defect centers generation in the $a$-SiO$_2$ dielectric or isolation layers, but the long-standing “hole transport-trapping” generation me…
